The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jun. 14, 2015
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Dongyan Zhang, Xiamen, CN;
Jie Zhang, Xiamen, CN;
Weihua Du, Xiamen, CN;
Xiaofeng Liu, Xiamen, CN;
Duxiang Wang, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.