The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
May. 28, 2015
Applicants:
Dong Kuk Lee, Suwon-si, KR;
Geun Woo Ko, Suwon-si, KR;
Geon-wook Yoo, Seongnam-si, KR;
Nam Goo Cha, Hwaseong-si, KR;
Inventors:
Dong Kuk Lee, Suwon-si, KR;
Geun Woo Ko, Suwon-si, KR;
Geon-Wook Yoo, Seongnam-si, KR;
Nam Goo Cha, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/08 (2010.01); H01L 33/42 (2010.01); H01L 33/32 (2010.01); H01L 33/18 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/08 (2013.01); H01L 33/18 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01);
Abstract
There is provided a semiconductor light emitting deviceincluding a substructureincluding at least one light emitting region Rincluding a plurality of three-dimensional (3-D) light emitting nanostructuresand at least one electrode region R, Rincluding a plurality of locations CPA,A,B,A,B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructuresand the plurality of locations CPA,A,B,A,B are identical.