The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 17, 2014
Lg Innotek Co., Ltd., Seoul, KR;
Yong Tae Moon, Seoul, KR;
Hyun Chul Lim, Seoul, KR;
LG INNOTEK CO., LTD., Seoul, KR;
Abstract
A light emitting device may include a first conductive type semiconductor layer, an active layer including a quantum well and a quantum wall on the first conductive type semiconductor layer, an undoped last barrier layer on the active layer; an AlInGaN (0≦x≦1, 0≦y≦1)-based layer on the undoped last barrier layer; and a second conductive type semiconductor layer on the AlInGaN-based layer. The undoped last barrier layer may be provided between the AlInGaN (0≦x≦1, 0≦y≦1)-based layer and a last quantum well which is closest to the second conductive type semiconductor layer among the quantum well and may include a first InGaN (0<p1<1) layer, an AlInGaN (0<q1, q2<1) layer on the first InGaN layer, and a second InGaN (0<p2<1) layer on the AlInGaN layer.