The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Oct. 29, 2014
Applicant:
Nichia Corporation, Anan-shi, JP;
Inventors:
Junya Narita, Yoshinogawa, JP;
Yohei Wakai, Anan, JP;
Kazuto Okamoto, Tokushima, JP;
Mizuki Nishioka, Tokushima, JP;
Assignee:
NICHIA CORPORATION, Anan-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01);
Abstract
A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.