The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Aug. 17, 2012
Applicants:

Chang Ki Baek, Pohang-si, KR;

Yoon Ha Jeong, Pohang-si, KR;

Seong Wook Choi, Seoul, KR;

Tai Uk Rim, Pohang-si, KR;

Soo Young Park, Seoul, KR;

Myung Dong Ko, Busan, KR;

Inventors:

Chang Ki Baek, Pohang-si, KR;

Yoon Ha Jeong, Pohang-si, KR;

Seong Wook Choi, Seoul, KR;

Tai Uk Rim, Pohang-si, KR;

Soo Young Park, Seoul, KR;

Myung Dong Ko, Busan, KR;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 31/068 (2012.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/054 (2014.01);
U.S. Cl.
CPC ...
H01L 31/035227 (2013.01); H01L 31/02327 (2013.01); H01L 31/022466 (2013.01); H01L 31/035281 (2013.01); H01L 31/0547 (2014.12); H01L 31/068 (2013.01); H01L 31/18 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01);
Abstract

Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus incident light can be concentrated at a p-n junction portion by means of a total reflection phenomenon of light caused by the difference between the refractive indices of a semiconductor layer and a transparent electrode layer, and light absorption may increase due to an increase in the light travel distance, thus improving photoelectric efficiency. Further, the method for manufacturing the solar cell involves etching a substrate and integrally forming the substrate and a p-type semiconductor layer including the asymmetric nanowires each of which has the angled sidewalls, thereby enabling reduced manufacturing costs and simple and easy manufacture of the nanowires having the angled sidewalls.


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