The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 31, 2014
Applicant:
Lgs Innovations Llc, Herndon, VA (US);
Inventors:
Assignee:
LGS INNOVATIONS LLC, Herndon, VA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 3/08 (2006.01); H01L 31/0232 (2014.01); H01L 31/117 (2006.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02325 (2013.01); G01T 3/08 (2013.01); H01L 31/028 (2013.01); H01L 31/0284 (2013.01); H01L 31/0304 (2013.01); H01L 31/117 (2013.01); H01L 31/1804 (2013.01); H01L 31/1808 (2013.01); H01L 31/1828 (2013.01); Y02P 70/521 (2015.11);
Abstract
The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also includes a p- or n-type doping layer formed on a surface of the pores. Moreover, a layer of fill material is formed on the p- or n-type doping layer. The present application also is directed to a method of making a solid state device. Further, the present application is directed to a method of detecting efficiency of solid state detector devices.