The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 30, 2013
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
This solar cell production method involves productively forming an antireflection film comprising silicon nitride, said antireflection film having an excellent passivation effect. In an embodiment, a remote plasma CVD is used to form a first silicon nitride film on a semiconductor substrate () using the plasma flow from a first plasma chamber (), then to form a second silicon nitride film, which has a different composition than the first silicon nitride film, using the plasma flow from a second plasma chamber (), into which ammonia gas and silane gas have been introduced at a different flow ratio than that of the first plasma chamber (). The plasma chambers () have excitation parts () that excite the ammonia gas, and activation reaction parts () and a flow controller ().