The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Apr. 02, 2014
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Keiji Wada, Osaka, JP;
Kenji Kanbara, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide layer, an insulating layer, a Schottky electrode, and a reaction region. The silicon carbide layer includes a p type region in contact with a first main surface and an n type region in contact with the p type region and the first main surface. The insulating layer has a third main surface, a fourth main surface, and a side wall surface connecting the third main surface and the fourth main surface, and is in contact with the first main surface at the fourth main surface. The Schottky electrode is in contact with the first main surface and the side wall surface. The reaction region is in contact with the insulating layer, the Schottky electrode, and the p type region. The reaction region contains an element constituting the Schottky electrode, an element constituting the insulating layer, silicon, and carbon.