The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 15, 2015
Samsung Display Co. Ltd., Yongin, Gyeonggi-Do, KR;
Dong Gun Oh, Osan-si, KR;
Young Gu Kang, Hwaseong-si, KR;
Sung In Ro, Hwaseong-si, KR;
Jae Hak Lee, Suwon-si, KR;
Sung Hoon Lim, Suwon-si, KR;
Woong Ki Jeon, Yongin, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.