The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Oct. 30, 2012
Applicant:
Sumitomo Chemical Company, Limited, Chuo-ku, Tokyo, JP;
Inventors:
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 27/085 (2006.01); H01L 29/66 (2006.01); H01L 29/812 (2006.01); H01L 21/02 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7785 (2013.01); H01L 27/085 (2013.01); H01L 29/66462 (2013.01); H01L 29/812 (2013.01); H01L 21/0262 (2013.01); H01L 21/02463 (2013.01); H01L 21/02505 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 29/207 (2013.01);
Abstract
A semiconductor wafer includes a base wafer, a first semiconductor portion that is formed on the base wafer and includes a first channel layer containing a majority carrier of a first conductivity type, a separation layer that is formed over the first semiconductor portion and contains an impurity to create an impurity level deeper than the impurity level of the first semiconductor portion, and a second semiconductor portion that is formed over the separation layer and includes a second channel layer containing a majority carrier of a second conductivity type opposite to the first conductivity type.