The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Aug. 17, 2015
Nitride semiconductor device using insulating films having different bandgaps to enhance performance
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Hiroshi Kawaguchi, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
The semiconductor device includes: a channel layer, a barrier layer, a first insulating film, and a second insulating film, each of which is formed above a substrate; a trench that penetrates the second insulating film, the first insulating film, and the barrier layer to reach the middle of the channel layer; and a gate electrode arranged in the trench and over the second insulating film via a gate insulating film. The bandgap of the second insulating film is smaller than that of the first insulating film, and the bandgap of the second insulating film is smaller than that of the gate insulating film GI. Accordingly, a charge (electron) can be accumulated in the second (upper) insulating film, thereby allowing the electric field strength at a corner of the trench to be improved. As a result, a channel is fully formed even at a corner of the trench, thereby allowing an ON-resistance to be reduced and an ON-current to be increased.