The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Mar. 01, 2012
Applicant:
Paul Ronald Stribley, Devon, GB;
Inventor:
Paul Ronald Stribley, Devon, GB;
Assignee:
X-FAB SEMICONDUCTOR FOUNDRIES AG, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1083 (2013.01); H01L 27/027 (2013.01); H01L 29/0626 (2013.01); H01L 29/7835 (2013.01); H01L 29/8611 (2013.01); H01L 29/0692 (2013.01); H01L 29/1045 (2013.01); H01L 29/1087 (2013.01); H01L 29/4238 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device for electrostatic discharge (ESD) protection including a source, a gate, a drain having a drain diffusion, and a diffusion region extending from, or located under, the drain diffusion. The source, the gate, the drain and the diffusion region are located in or on a substrate. The diffusion region is laterally spaced from at least one of the gate or the outer edge of the drain diffusion.