The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Mar. 29, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Sung-Ho Eun, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 23/528 (2006.01); H01L 45/00 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 23/528 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01);
Abstract

A semiconductor device includes first conductive lines and first and second insulation patterns on a substrate, first structures spaced apart from each other on the first conductive lines, a variable resistance pattern on the first structures, and a second electrode on the variable resistance pattern. The first conductive lines extend in a first direction. The first structures include a switching pattern and a first electrode sequentially stacked. The first insulation pattern fills a space between the first structures in a second direction and the first insulation pattern has a first top surface higher than a top surface of the first structures. The second insulation pattern fills a space between the first structures in the first direction, and the second insulation pattern has a second top surface higher than a top surface of the first structures. The variable resistance pattern fills an opening defined by the first and second insulation patterns.


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