The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Apr. 24, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device may include an insulating layer provided in one body on a substrate, a first gate electrode and a second gate electrode disposed on the insulating layer, the first and second gate electrodes extending in a first direction parallel to a top surface of the substrate, a first channel structure penetrating the first gate electrode and the insulating layer so as to be connected to the substrate, a second channel structure penetrating the second gate electrode and the insulating layer so as to be connected to the substrate, and a contact penetrating the insulating layer between the first gate electrode and the second gate electrode. The contact may be connected to a common source region formed in the substrate, and the common source region may have a first conductivity type. Further, the first gate electrode and the second gate electrode may be spaced apart from each other in a second direction at the same level from the substrate, wherein the second direction intersects the first direction and is parallel to the top surface of the substrate.