The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Dec. 21, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yoonhae Kim, Suwon-si, KR;

Myungil Kang, Yongin-si, KR;

Sooyeon Jeong, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes first and second active regions. Each active region includes a plurality of fin protrusions and a recessed area disposed between the fin protrusions. A plurality of gate structures are disposed on each of the plurality of fin protrusions. A semiconductor layer is disposed in each recessed area. A distance between the gate structures of the first active region is the same as a distance between the gate structures of the second active region, and a height difference between a bottom surface of the semiconductor layer of the first recessed area and a top surface of each of the fin protrusions of the first active region is smaller than a height difference between a bottom surface of the semiconductor layer of the recessed area of the second active region and a top surface of each of the fin protrusions of the second active region.


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