The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Sep. 24, 2015
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Kyung Kyu Min, Seoul, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 27/108 (2006.01); H01L 21/265 (2006.01); H01L 21/311 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/26513 (2013.01); H01L 21/311 (2013.01); H01L 21/7621 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 27/10891 (2013.01); H01L 29/42356 (2013.01); H01L 29/7827 (2013.01);
Abstract
A semiconductor device and a method for forming the same can block a moving path of electrons between neighbor buried gates. A semiconductor device includes a device isolation film formed to define an active region over a semiconductor substrate. The semiconductor device also includes a plurality of buried gates formed over the active region, and a barrier film formed between neighboring buried gates from the plurality of buried gates.
Min, Kyung. (2017). Semiconductor device and method for forming the same (U.S. Patent No. 9558990). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9558990
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile