The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 10, 2015
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 27/1203 (2013.01);
Abstract
After embedding a silicon oxide film within a second trench that opens in a semiconductor substrate using a silicon nitride film as a hard mask, the silicon oxide film over the silicon nitride film is polished, and then, wet etching is performed before a step for removing the silicon nitride film, and thereby the upper surface of the silicon oxide film within a first trench opened in the silicon nitride film is retreated.
Aika, Tomohiko. (2017). Method for manufacturing semiconductor device (U.S. Patent No. 9558989). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9558989
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile