The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Oct. 30, 2015
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 21/02164 (2013.01); H01L 21/31051 (2013.01); H01L 21/31055 (2013.01); H01L 21/31144 (2013.01); H01L 21/768 (2013.01); H01L 23/3192 (2013.01); H01L 23/49575 (2013.01); H01L 23/5227 (2013.01); H01L 23/58 (2013.01); H01L 28/10 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92147 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/181 (2013.01);
Abstract
An improvement is achieved in the reliability of a semiconductor device by preventing a dielectric breakdown between two semiconductor chips facing each other. During the manufacturing of first and second semiconductor chips, the process of planarizing the upper surfaces of insulating films is performed. Then, the first and second semiconductor chips are stacked via an insulating sheet with the respective insulating films of the first and second semiconductor chips facing each other such that the respective coils of the first and second semiconductor chips are magnetically coupled to each other.