The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Nov. 25, 2014
Applicant:
Nutech Ventures, Lincoln, NE (US);
Inventors:
Jody G. Redepenning, Lincoln, NE (US);
Alexander Sinitskii, Lincoln, NE (US);
Benjamin Wymore, Lincoln, NE (US);
Assignee:
NUtech Ventures, Lincoln, NE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 29/1606 (2013.01); H01L 29/42364 (2013.01); H01L 29/4908 (2013.01); H01L 29/51 (2013.01); H01L 29/66045 (2013.01); H01L 29/66742 (2013.01); H01L 29/78684 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02527 (2013.01);
Abstract
A top-gated graphene field effect transistor can be fabricated by forming a layer of graphene on a substrate, and applying an electrochemical deposition process to deposit a layer of dielectric polymer on the graphene layer. An electric potential between the graphene layer and a reference electrode is cycled between a lower potential and a higher potential. A top gate is formed above the polymer.