The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Jan. 07, 2016
Applicants:

Fred Sharifi, Kirkland, WA (US);

Henry Lezec, Bethesda, MD (US);

Myung-gyu Kang, Gaithersburg, MD (US);

Inventors:

Fred Sharifi, Kirkland, WA (US);

Henry Lezec, Bethesda, MD (US);

Myung-Gyu Kang, Gaithersburg, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/00 (2006.01); H01J 1/304 (2006.01); C25F 3/02 (2006.01); H01J 9/02 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
H01J 1/3044 (2013.01); C25F 3/02 (2013.01); H01J 1/304 (2013.01); H01J 1/3046 (2013.01); H01J 9/022 (2013.01); H01J 9/025 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); B82Y 99/00 (2013.01); H01J 2201/3048 (2013.01); H01J 2201/30484 (2013.01); Y10S 977/814 (2013.01); Y10S 977/888 (2013.01); Y10S 977/939 (2013.01);
Abstract

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cmat 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.


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