The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Dec. 07, 2015
Renesas Electronics Corporation, Tokyo, JP;
Yoji Kashihara, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
The number of level shifters is reduced in a decode circuit of a nonvolatile memory. A semiconductor device is configured with an electrically rewritable nonvolatile memory cell array, and a decode circuit which generates a selection signal to select a driver for a memory gate line (word line). The decode circuit includes a level shifter to step up a signal after predecode. The selection signal is generated by decoding predecode signals which are stepped up by the level shifter in the logical operation circuit. A logic gate to invert the logical level of the predecode signal depending on an operation mode is provided in the preceding stage of each level shifter. When decoding the stepped-up predecode signal, the logical operation circuit performs a different logical operation depending on the operation mode.