The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Nov. 13, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yonsei University, University—industry Foundation(uif), Seoul, KR;
Mi-Jeong Kim, Hwaseong-si, KR;
In Taek Han, Seoul, KR;
June Huh, Seoul, KR;
Seong-Jun Jeong, Ulsan-si, KR;
Haeng Deog Koh, Hwaseong-si, KR;
Youn Jung Park, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
YONSEI UNIVESITY, UNIVERSITY-INDUSTRY FOUNDATION(UIF), Seoul, KR;
Abstract
A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r, and the inner apex having a second curvature radius r, respectively, and the width of the patterning area W, the first curvature radius rand the second curvature radius r, satisfy Inequation 1: