The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

May. 20, 2016
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Makoto Watanabe, Yokohama, JP;

Yoshinori Tagawa, Yokohama, JP;

Hiroyuki Murayama, Yokohama, JP;

Shuhei Oya, Kawasaki, JP;

Takanobu Manabe, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B41J 2/16 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
B41J 2/1626 (2013.01); B41J 2/162 (2013.01); H01L 21/02019 (2013.01); H01L 21/30608 (2013.01);
Abstract

Performed are a non-through hole forming step of partitioning a supply path forming region of a second surface into a first region corresponding to a forming position of a beam, a second region located adjacent to the first region on both sides thereof, and a third region that is none of the first region and the second region, and forming a plurality of non-through holes in the second region and the third region, and an etching step of subjecting a silicon substrate to anisotropic etching from the second surface, to thereby form the supply path and the beam in the supply path. In the non-through hole forming step, at least one of an interval or a depth of the non-through holes is caused to differ in the second region and the third region, to thereby control the shape and dimension of the beam to be formed in the etching step.


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