The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Jun. 06, 2013
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

Anthony Puliafico, Greensboro, NC (US);

David E. Jones, Cedar Rapids, IA (US);

Paul D. Jones, Center Point, IA (US);

Chris Levesque, Fountain Valley, CA (US);

William David Southcombe, San Diego, CA (US);

Scott Yoder, Fuquay Varina, NC (US);

Terry J. Stockert, Cedar Rapids, IA (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/19 (2006.01); H03F 1/02 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01); H03F 3/24 (2006.01); H03F 3/60 (2006.01); H03F 3/68 (2006.01); H03F 3/72 (2006.01); H03F 3/191 (2006.01); H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H03F 1/0227 (2013.01); H03F 1/0261 (2013.01); H03F 1/0277 (2013.01); H03F 3/191 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/245 (2013.01); H03F 3/602 (2013.01); H03F 3/68 (2013.01); H03F 3/72 (2013.01); H03F 2200/171 (2013.01); H03F 2200/222 (2013.01); H03F 2200/27 (2013.01); H03F 2200/318 (2013.01); H03F 2200/336 (2013.01); H03F 2200/387 (2013.01); H03F 2200/411 (2013.01); H03F 2200/414 (2013.01); H03F 2200/417 (2013.01); H03F 2200/451 (2013.01); H03F 2200/504 (2013.01); H03F 2200/534 (2013.01); H03F 2200/537 (2013.01); H03F 2200/541 (2013.01); H03F 2203/21106 (2013.01); H03F 2203/21142 (2013.01); H03F 2203/21157 (2013.01);
Abstract

A radio frequency (RF) switch semiconductor die and an RF supporting structure are disclosed. The RF switch semiconductor die is attached to the RF supporting structure. The RF switch semiconductor die has a first edge and a second edge, which may be opposite from the first edge. The RF supporting structure has a group of alpha supporting structure connection nodes, which is adjacent to the first edge; a group of beta supporting structure connection nodes, which is adjacent to the second edge; and an alpha AC grounding supporting structure connection node, which is adjacent to the second edge. When the group of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the group of beta supporting structure connection nodes are inactive.


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