The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Mar. 13, 2014
Applicant:
Nitto Denko Corporation, Osaka, JP;
Inventors:
Assignee:
NITTO DENKO CORPORATION, Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01Q 13/10 (2006.01); H01Q 1/24 (2006.01); H01Q 1/52 (2006.01); H01Q 13/08 (2006.01); H01L 21/768 (2006.01); H01L 23/12 (2006.01); H01L 23/528 (2006.01); H01L 23/66 (2006.01); H01Q 23/00 (2006.01);
U.S. Cl.
CPC ...
H01Q 13/106 (2013.01); H01L 21/76892 (2013.01); H01L 23/12 (2013.01); H01L 23/528 (2013.01); H01L 23/66 (2013.01); H01Q 1/248 (2013.01); H01Q 1/52 (2013.01); H01Q 13/085 (2013.01); H01Q 23/00 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48464 (2013.01);
Abstract
First and second conductor layers are formed on a main surface of a base layer. A tapered slot is formed between the first and second conductive layers. A first slit is formed at the first conductor layer, and a second slit is formed at the second conductor layer. Thus, the first conductor layer is divided into a first device connection portion and a first antenna portion, and the second conductor layer is divided into a second device connection portion and a second antenna portion. A semiconductor device is connected to the first and second device connection portions.