The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jan. 15, 2015
Applicant:
Philip John Rayner, Huntingdon, GB;
Inventor:
Philip John Rayner, Huntingdon, GB;
Assignee:
Nexeon Limited, Oxfordshire, GB;
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/134 (2010.01); H01M 4/04 (2006.01); H01M 4/583 (2010.01); C22C 21/02 (2006.01); C22C 21/04 (2006.01); H01M 4/38 (2006.01); H01M 4/525 (2010.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/134 (2013.01); C22C 21/02 (2013.01); C22C 21/04 (2013.01); H01M 4/0492 (2013.01); H01M 4/38 (2013.01); H01M 4/386 (2013.01); H01M 4/583 (2013.01); H01M 4/525 (2013.01); H01M 10/0525 (2013.01); Y02E 60/122 (2013.01); Y10T 428/24149 (2015.01); Y10T 428/298 (2015.01); Y10T 428/2982 (2015.01);
Abstract
There is provided a method of forming silicon anode material for rechargeable cells. The method includes providing a metal matrix, comprising no more than 30 wt % silicon, including silicon structures dispersed therein. The method further includes at least partially etching the metal matrix to at least partially isolate the silicon structures.