The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Sep. 29, 2014
Applicant:

Ngk Insulators, Ltd., Nagoya-Shi, JP;

Inventors:

Takaaki Koizumi, Tajima, JP;

Tomohiko Hibino, Nagoya, JP;

Takashi Ebigase, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/18 (2006.01); H01L 41/187 (2006.01); C04B 35/491 (2006.01); H01L 41/314 (2013.01); B41J 2/14 (2006.01); B41J 2/16 (2006.01); H01L 41/08 (2006.01); H01L 41/09 (2006.01); B32B 18/00 (2006.01); C04B 35/622 (2006.01); H01L 41/047 (2006.01); C04B 35/01 (2006.01); C04B 35/499 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1876 (2013.01); B32B 18/00 (2013.01); B41J 2/14233 (2013.01); B41J 2/161 (2013.01); B41J 2/1623 (2013.01); B41J 2/1629 (2013.01); B41J 2/1645 (2013.01); C04B 35/01 (2013.01); C04B 35/491 (2013.01); C04B 35/499 (2013.01); C04B 35/62222 (2013.01); H01L 41/047 (2013.01); H01L 41/0805 (2013.01); H01L 41/0973 (2013.01); H01L 41/1878 (2013.01); H01L 41/314 (2013.01); C04B 2235/3249 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/80 (2013.01); C04B 2237/345 (2013.01); C04B 2237/346 (2013.01); Y10T 29/42 (2015.01);
Abstract

Provided is a piezoelectric/electrostrictive film type element in which the film thickness of the piezoelectric/electrostrictive film is small, the piezoelectric/electrostrictive film is dense, and the piezoelectric/electrostrictive film has good durability and insulation quality. The piezoelectric/electrostrictive film type element includes a substrate, a lower electrode film, a piezoelectric/electrostrictive film and an upper electrode film. The substrate and the lower electrode film are fixed adherently each other. The film thickness of the piezoelectric/electrostrictive film is 5 μm or less. The piezoelectric/electrostrictive film is composed of a piezoelectric/electrostrictive ceramic. The piezoelectric/electrostrictive ceramic contains lead zirconate titanate and a bismuth compound. The bismuth/lead ratio in the peripheral section inside the grain which is relatively close to the grain boundary is greater than the bismuth/lead ratio in the center section inside the grain which is relatively far from the grain boundary.


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