The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Mar. 13, 2015
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Kenichi Kawaguchi, Ebina, JP;
Nami Yasuoka, Kawasaki, JP;
Hiroyasu Yamashita, Isehara, JP;
Yoshiaki Nakata, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 31/075 (2012.01); H01L 31/107 (2006.01); B82Y 20/00 (2011.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03529 (2013.01); B82Y 20/00 (2013.01); H01L 31/02327 (2013.01); H01L 31/035209 (2013.01); H01L 31/035236 (2013.01); H01L 31/035281 (2013.01); H01L 31/075 (2013.01); H01L 31/105 (2013.01); H01L 31/107 (2013.01); H01L 31/18 (2013.01); H01L 31/184 (2013.01); Y02E 10/544 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11);
Abstract
A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer.