The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Mar. 18, 2013
Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Koichi Maegawa, Tokyo, JP;

Tomohiro Onizuka, Tokyo, JP;

Mitsuo Yoshihara, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/028 (2006.01); C30B 29/06 (2006.01); C30B 13/20 (2006.01); C30B 15/08 (2006.01); C30B 28/06 (2006.01); B22D 11/00 (2006.01); B22D 11/041 (2006.01); B22D 11/108 (2006.01); B22D 11/11 (2006.01); B22D 11/12 (2006.01); B22D 11/20 (2006.01); C30B 28/04 (2006.01);
U.S. Cl.
CPC ...
H01L 31/028 (2013.01); B22D 11/001 (2013.01); B22D 11/041 (2013.01); B22D 11/108 (2013.01); B22D 11/11 (2013.01); B22D 11/1213 (2013.01); B22D 11/20 (2013.01); C30B 13/20 (2013.01); C30B 15/08 (2013.01); C30B 28/06 (2013.01); C30B 29/06 (2013.01); C30B 28/04 (2013.01);
Abstract

Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by charging silicon raw materials into a bottomless cold mold, melting the silicon raw materials using electromagnetic induction heating, and pulling down the molten silicon to solidify it, wherein the depth of solid-liquid interface before the start of the final solidification process is decreased by reducing a pull down rate of ingot in a final phase of steady-state casting. By adopting the method, the region of precipitation of foreign substances in the finally solidified portion of ingot can be reduced and cracking generation can be prevented upon production of a polycrystalline silicon as a substrate material for a solar cell.


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