The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Aug. 11, 2015
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Helmut Puchner, Santa Clara, CA (US);
Igor Polishchuk, Fremont, CA (US);
Sagy Charel Levy, Zichron Yaakov, IL;
Assignee:
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 21/28282 (2013.01); H01L 29/4234 (2013.01); H01L 29/513 (2013.01); H01L 29/792 (2013.01);
Abstract
A method includes forming a first oxide layer. The method further includes etching a portion of the first oxide layer using a first decoupled plasma nitridation process. The method includes forming, subsequent to the etching, a charge-trapping layer on the first oxide layer.