The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Aug. 05, 2015
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Kyoung Chul Jang, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/36 (2006.01); H01L 21/283 (2006.01); H01L 21/3215 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66613 (2013.01); H01L 21/283 (2013.01); H01L 21/30604 (2013.01); H01L 21/3215 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device is disclosed. The semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active region and a device isolation film, a doping layer having second type conductivity and buried in a bottom part of the semiconductor substrate of the active region, a recess formed in the semiconductor substrate, a gate electrode provided in the recess.
Jang, Kyoung. (2017). Semiconductor device and method for forming the same (U.S. Patent No. 9553167). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9553167
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile