The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Apr. 19, 2013
Applicant:

Carnegie Mellon University, Pittsburgh, PA (US);

Inventors:

Rozana Hussin, Pittsburgh, PA (US);

Yixuan Chen, Pittsburgh, PA (US);

Yi Luo, Pittsburgh, PA (US);

Assignee:

Carnegie Mellon University, Pittsburgh, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66219 (2013.01); H01L 29/0665 (2013.01); H01L 29/6603 (2013.01); H01L 29/6609 (2013.01); H01L 29/66128 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01);
Abstract

In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.


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