The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Aug. 06, 2015
Applicant:

Lapis Semiconductor Co., Ltd., Kanagawa, JP;

Inventor:

Toru Mori, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/063 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 29/0653 (2013.01); H01L 29/1045 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate; a first semiconductor region that includes an extension portion extending in a specific direction at a specific width as viewed along a direction orthogonal to the main surface; a second semiconductor region that is shaped to include a portion running along the extension portion of the first semiconductor region as viewed along the direction orthogonal to the main surface; a field relaxation layer that relaxes a field generated between the first semiconductor region and the second semiconductor region, that is formed on the second semiconductor region side of the main surface, and that is formed by a semiconductor layer; and a conductor that is connected to the second semiconductor region, and that has an end portion on the first conductor region side positioned within the range of the field relaxation layer.


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