The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jun. 30, 2015
International Business Machines Corporation, Armonk, NY (US);
Anthony J. Annunziata, Stamford, CT (US);
Michael C. Gaidis, Wappingers Falls, NY (US);
Rohit Kilaru, New York, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A technique relates to a linear magnetoresistive random access memory (MRAM) device. A linear magnetic tunnel junction structure includes a non-magnetic tunnel barrier on top of a free layer and a reference layer on top of the non-magnetic tunnel barrier, where the linear magnetic tunnel junction structure is in a line. Bottom contacts are separated from one another by a column space while the plurality of bottom contacts are self-aligned to the linear magnetic tunnel junction structure, such that the plurality of bottom contacts are in the line with and underneath the linear magnetic tunnel junction structure. The bottom contacts abut a bottom of the linear magnetic tunnel junction structure. MRAM devices are formed by having non-conducting parts of the free layer isolating individual interfaces between the bottom contacts and the free layer. The MRAM devices are formed in the line of the linear magnetic tunnel junction structure.