The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jan. 14, 2016
Applicants:
Jung-hwan Lee, Seoul, KR;
Jee-yong Kim, Hwaseong-si, KR;
Dae-seok Byeon, Seongnam-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11565 (2013.01);
Abstract
Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.