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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9553101 B1

PDFFull Text
Date of Patent:
Jan. 24, 2017

Filed:

Apr. 22, 2014

Semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taekyung Kim, Seoul, KR;

Kwang Soo Seol, Yongin-si, KR;

Hyunchul Back, Suwon-si, KR;

Jin-Soo Lim, Yongin-si, KR;

Seong Soon Cho, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, KR;

Attorney:

Muir Patnet Law, PLLC

Primary Examiner:

David Vu

Assistant Examiner:

Mouloucoulaye Inoussa

Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 27/06 (2006.01); H01L 27/24 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 27/0688 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/11597 (2013.01); H01L 27/249 (2013.01); H01L 27/2409 (2013.01); H01L 27/2454 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/10 (2013.01); H01L 45/1226 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/148 (2013.01);
Abstract

A semiconductor device may include gate structures spaced apart above a top surface of a substrate. The gate structures may include a horizontal electrode extending in a first direction parallel with the top surface of a substrate. An isolation insulating layer may be disposed between the gate structures. A plurality of cell pillars may penetrate the horizontal electrode and connect to the substrate. The plurality of cell pillars may include a minimum spacing defined by a shortest distance between any two of the plurality of cell pillars. The thickness of the horizontal electrode may be greater than the minimum spacing of the cell pillars.

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