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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9553085 B1

PDFFull Text
Date of Patent:
Jan. 24, 2017

Filed:

Nov. 23, 2015

Fabricating method for high voltage semiconductor power switching device

Applicant:

Mosway Semiconductor Limited, New Territories, HK;

Inventors:

Chiu-Sing Celement Tse, Yuen Long, HK;

On-Bon Peter Chan, Shatin, HK;

Chi-Keung Tang, New Territories, HK;

Assignee:

Mosway Semiconductor Limited, Tsuen Wan, New Territories, Hong Kong, CN;

Attorney:

Alix, Yale & Ristas, LLP

Primary Examiner:

Caleb Henry

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/06 (2006.01); H01L 21/56 (2006.01); H01L 21/8249 (2006.01); H01L 21/84 (2006.01); H01L 23/535 (2006.01); H01L 27/082 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 21/565 (2013.01); H01L 21/8249 (2013.01); H01L 21/84 (2013.01); H01L 23/535 (2013.01); H01L 27/0647 (2013.01); H01L 27/0825 (2013.01); H01L 27/1203 (2013.01); H01L 29/0634 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0847 (2013.01); H01L 29/1004 (2013.01); H01L 29/1095 (2013.01); H01L 29/41708 (2013.01); H01L 29/41758 (2013.01); H01L 29/42304 (2013.01); H01L 29/42356 (2013.01); H01L 29/42364 (2013.01); H01L 29/45 (2013.01); H01L 29/4916 (2013.01); H01L 29/872 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49171 (2013.01); H01L 2924/13055 (2013.01);
Abstract

A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects to the base of the second high voltage bipolar transistor (inner base), and the emitter of the second high voltage bipolar transistor serves as the emitter terminal. A diode has its anode connected to the inner base (emitter of the first high voltage bipolar transistor, or base of the second high voltage bipolar transistor), and its cathode connected to the base terminal. Similarly, a three terminal hybrid MOSFET/bipolar high voltage switching device can be formed by replacing the first high voltage bipolar transistor of the previous switching device by a high voltage MOSFET.

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