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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9553084 B1

PDFFull Text
Date of Patent:
Jan. 24, 2017

Filed:

Sep. 09, 2013

Switching element, semiconductor device, and semiconductor device manufacturing method

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shigeru Hasegawa, Tokyo, JP;

Kazuhiro Morishita, Tokyo, JP;

Takeshi Kitani, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

David Vu

Assistant Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/66 (2006.01); H01L 27/10 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 21/52 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/52 (2013.01); H01L 21/823475 (2013.01); H01L 22/20 (2013.01); H01L 23/528 (2013.01); H01L 23/5228 (2013.01); H01L 27/101 (2013.01); H01L 28/20 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/4232 (2013.01); H01L 29/7803 (2013.01); H01L 29/7817 (2013.01); H01L 29/7395 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to the present invention, a switching element includes a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad. Thus, measurement of the gate resistance value and selection from gate resistances of the switching element can be performed after the completion of the gate-resistor-incorporating-type switching element.

Find Patent Forward Citations

Hasegawa, Shigeru. (2017). Switching element, semiconductor device, and semiconductor device manufacturing method (U.S. Patent No. 9553084). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9553084

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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