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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9553081 B1

PDFFull Text
Expired
Date of Patent:
Jan. 24, 2017

Filed:

Nov. 27, 2013

Semiconductor device including a redistribution layer and metallic pillars coupled thereto

Applicant:

Enpirion, Inc., Hampton, NJ (US);

Inventors:

Ashraf W. Lotfi, Bridgewater, NJ (US);

Jeffrey Demski, Orefield, PA (US);

Anatoly Feygenson, Hillsborough, NJ (US);

Douglas Dean Lopata, Boyertown, PA (US);

Jay Norton, Wind Gap, PA (US);

John D. Weld, Ledgewood, NJ (US);

Assignee:

Enpirion, Inc., Hampton, NJ (US);

Attorney:

Fletcher Yoder P.C.

Primary Examiner:

Galina Yushina

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 23/482 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 25/00 (2006.01); H01L 23/36 (2006.01); H01L 23/495 (2006.01); H01L 29/78 (2006.01); H01L 23/31 (2006.01); H01L 23/64 (2006.01); H01L 23/00 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/8234 (2013.01); H01L 21/823871 (2013.01); H01L 23/36 (2013.01); H01L 23/4824 (2013.01); H01L 23/495 (2013.01); H01L 23/49589 (2013.01); H01L 23/522 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 27/0203 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 29/41758 (2013.01); H01L 29/665 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 21/28518 (2013.01); H01L 21/76801 (2013.01); H01L 21/76895 (2013.01); H01L 23/3107 (2013.01); H01L 23/642 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 29/0847 (2013.01); H01L 29/1045 (2013.01); H01L 29/1083 (2013.01); H01L 29/456 (2013.01); H01L 29/4933 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48647 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/19106 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor ('LDMOS') cells. The semiconductor device also includes a redistribution layer electrically coupled to the plurality of LDMOS cells and a plurality of metallic pillars distributed over and electrically coupled to the redistribution layer.

Find Patent Forward Citations

Quick Actions:

Lotfi, Ashraf. (2017). Semiconductor device including a redistribution layer and metallic pillars coupled thereto (U.S. Patent No. 9553081). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9553081

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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