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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9553049 B1

PDFFull Text
Date of Patent:
Jan. 24, 2017

Filed:

Feb. 22, 2013

Copper interconnects having a titanium-platinum-titanium assembly between copper and compound semiconductor

Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventor:

Kezia Cheng, Lowell, MA (US);

Assignee:

Skyworks Solutions, Inc., Woburn, MA (US);

Attorney:

Knobbe Martens Olson and Bear LLP

Primary Examiner:

Thao X Le

Assistant Examiner:

J R Oakley

Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 21/469 (2006.01); H01L 23/485 (2006.01); H01L 29/47 (2006.01); H01L 29/45 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/469 (2013.01); H01L 21/768 (2013.01); H01L 21/76829 (2013.01); H01L 21/76841 (2013.01); H01L 23/485 (2013.01); H01L 23/532 (2013.01); H01L 24/05 (2013.01); H01L 23/4855 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 29/41 (2013.01); H01L 29/452 (2013.01); H01L 29/475 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/4911 (2013.01); H01L 2224/49171 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13063 (2013.01);
Abstract

Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first barrier layer disposed over the first Ti layer, a second Ti layer disposed over the first barrier layer, and a copper (Cu) layer disposed over the second Ti layer. The second Ti layer can be configured to inhibit or reduce alloying of the Cu layer and the first barrier layer. The first Ti layer, the first barrier layer, and the second Ti layer can be configured to yield a barrier between the Cu layer and an ohmic metal layer formed on the compound semiconductor. The metalized structure can further include a third Ti layer disposed over the Cu layer and a second barrier layer disposed over the third Ti layer. The first and second barrier layers can include platinum (Pt) and/or palladium (Pd).

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