The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jul. 07, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Mark James Harrison, Wernberg, AT;
Martin Sporn, Melk, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/482 (2006.01); H01L 21/683 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 21/2855 (2013.01); H01L 21/28518 (2013.01); H01L 21/6836 (2013.01); H01L 23/4827 (2013.01); H01L 23/53266 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.