The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Mar. 31, 2014
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Takashi Ozaki, Toyama, JP;
Hideki Horita, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/321 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02211 (2013.01); C23C 16/0218 (2013.01); C23C 16/402 (2013.01); C23C 16/45527 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/32105 (2013.01); H01L 21/67109 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas to the substrate in the process chamber; and supplying a reaction gas to the substrate in the process chamber.