The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Oct. 03, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Yongkyu Lee, Hwaseong-Si, KR;

Yeongtaek Lee, Seoul, KR;

Youngbae Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0097 (2013.01); G11C 13/0069 (2013.01); G11C 11/5614 (2013.01); G11C 11/5685 (2013.01); G11C 13/0064 (2013.01); G11C 2013/0076 (2013.01);
Abstract

A method of resetting a variable resistance memory cell in a nonvolatile memory device includes; programming the memory cell to a set state using a corresponding compliance current, and then programming the memory cell to a reset state by pre-reading the variable resistance memory cell to determine its resistance and resetting the memory cell using a variable reset voltage determined in response to the determined resistance.


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