The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Nov. 16, 2015
Applicant:

Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;

Inventors:

Seongook Jung, Seoul, KR;

Kyoman Kang, Gunpo-si, KR;

Hanwool Jeong, Seoul, KR;

Young Hwi Yang, Seoul, KR;

Juhyun Park, Incheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/419 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/18 (2013.01);
Abstract

Disclosed is a memory device. The memory device includes a bit-cell comprising a cross-coupled inverter and pass gate transistor connected to data storage node of the cross-coupled inverter, a read buffer transistor having a drain terminal connected to a bit line for read operation and a gate terminal connected to the pass gate transistor, a write operation transistor connected between the pass gate transistor and a bit line for write operation, and a drive transistor unit which is connected to a local line between the pass gate transistors and the write operation transistor and which provide a voltage to a gate terminal of the read buffer transistor based on a data value stored at the bit-cell.


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