The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Oct. 01, 2015
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Thomas Andre, Austin, TX (US);

Syed Alam, Austin, TX (US);

Chitra K. Subramanian, Mahopac, NY (US);

Dietmar Gogl, Austin, TX (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 11/14 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/14 (2013.01); G11C 11/15 (2013.01); G11C 11/16 (2013.01); G11C 13/0002 (2013.01);
Abstract

A memory device is configured to identify a set of bit cells to be changed from a first state to a second state. In some examples, the memory device may apply a first voltage to the set of bit cells to change a least a first portion of the set of bit cells to the second state. In some cases, the memory device may also identify a second portion of the bit cells that remained in the first state following the application of the first voltage. In these cases, the memory device may apply a second voltage having a greater magnitude, duration, or both to the second portion of the set of bit cells in order to set the second portion of bit cells to the second state.


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