The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jul. 29, 2015
Raytheon Bbn Technologies Corp., Cambridge, MA (US);
Hypres, Inc., Elmsford, NY (US);
Thomas Ohki, Arlington, MA (US);
Oleg Mukhanov, Putnam Valley, NY (US);
Alex Kirichenko, Pleasantville, NY (US);
RAYTHEON BBN TECHNOLOGIES CORP., Cambridge, MA (US);
HYPRES, INC., Elmsford, NY (US);
Abstract
A magnetic random access memory (MRAM) array including: a plurality of MRAM cells arranged in an array configuration, each comprising a first type nTron and a magnetic memory element; a wordline select circuit comprising of a second type nTron to drive a plurality of parallel wordlines; and a plurality of bitline select circuits, each comprising of said second type nTron for writing to and reading from a column of memory cells in the array and each capable of selecting a single MRAM cell for a memory read or write operation, wherein the second nTron has a higher current drive than the first nTron.