The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Oct. 28, 2014
Applicant:
Seiko Instruments Inc., Chiba-shi, Chiba, JP;
Inventors:
Masayuki Hashitani, Chiba, JP;
Hideo Yoshino, Chiba, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/24 (2006.01); G05F 3/16 (2006.01); G05F 3/20 (2006.01);
U.S. Cl.
CPC ...
G05F 3/16 (2013.01); G05F 3/24 (2013.01); G05F 3/20 (2013.01);
Abstract
A reference voltage generator has a first N type depletion MOS transistor configured to cause a constant current to flow, and a second N type depletion MOS transistor diode-connected to the first N type depletion MOS transistor and configured to generate a reference voltage based on the constant current. The first and second N type depletion MOS transistors have the same temperature coefficient of a threshold voltage. The first N type depletion MOS transistor has a buried channel into which arsenic impurities are diffused. The second N type depletion MOS transistor has a buried channel into which phosphorous impurities are diffused.