The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Mar. 19, 2014
Applicant:
University-industry Cooperation Group of Kyung Hee University, Yongin-si, Gyeonggi-do, KR;
Inventors:
Sun-Kook Kim, Yongin-si, KR;
Jong-Soo Rhyee, Yongin-si, KR;
Assignee:
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); C30B 1/10 (2006.01); C30B 29/46 (2006.01); C30B 1/02 (2006.01); C30B 13/24 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 27/10 (2006.01); C01B 19/00 (2006.01); C30B 1/04 (2006.01); C30B 1/08 (2006.01); C30B 29/16 (2006.01); H01L 21/8256 (2006.01);
U.S. Cl.
CPC ...
C30B 1/10 (2013.01); C01B 19/00 (2013.01); C01B 19/007 (2013.01); C30B 1/02 (2013.01); C30B 1/04 (2013.01); C30B 1/08 (2013.01); C30B 13/24 (2013.01); C30B 29/16 (2013.01); C30B 29/46 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 21/02667 (2013.01); H01L 21/8256 (2013.01); H01L 27/092 (2013.01); H01L 27/101 (2013.01); H01L 29/78681 (2013.01); H01L 21/823807 (2013.01);
Abstract
Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M'X′within the film; and, thereafter, forming a film of a chalcogen compound represented by MXby forming the chalcogen compound represented by MXthrough post-heating.