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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9551087 B1

PDFFull Text
Date of Patent:
Jan. 24, 2017

Filed:

Mar. 19, 2014

Two-dimensional large-area growth method for chalcogen compound, method for manufacturing cmos-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and cmos-type structure

Applicant:

University-industry Cooperation Group of Kyung Hee University, Yongin-si, Gyeonggi-do, KR;

Inventors:

Sun-Kook Kim, Yongin-si, KR;

Jong-Soo Rhyee, Yongin-si, KR;

Assignee:

UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Elias M Ullah

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); C30B 1/10 (2006.01); C30B 29/46 (2006.01); C30B 1/02 (2006.01); C30B 13/24 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); H01L 27/10 (2006.01); C01B 19/00 (2006.01); C30B 1/04 (2006.01); C30B 1/08 (2006.01); C30B 29/16 (2006.01); H01L 21/8256 (2006.01);
U.S. Cl.
CPC ...
C30B 1/10 (2013.01); C01B 19/00 (2013.01); C01B 19/007 (2013.01); C30B 1/02 (2013.01); C30B 1/04 (2013.01); C30B 1/08 (2013.01); C30B 13/24 (2013.01); C30B 29/16 (2013.01); C30B 29/46 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 21/02667 (2013.01); H01L 21/8256 (2013.01); H01L 27/092 (2013.01); H01L 27/101 (2013.01); H01L 29/78681 (2013.01); H01L 21/823807 (2013.01);
Abstract

Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M'X′within the film; and, thereafter, forming a film of a chalcogen compound represented by MXby forming the chalcogen compound represented by MXthrough post-heating.

Find Patent Forward Citations

Quick Actions:

Kim, Sun-Kook. (2017). Two-dimensional large-area growth method for chalcogen compound, method for manufacturing cmos-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and cmos-type structure (U.S. Patent No. 9551087). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9551087

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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