The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
May. 28, 2013
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Kyoung Seok Min, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/36 (2006.01); B22F 9/06 (2006.01); C30B 1/02 (2006.01); B22F 1/00 (2006.01); C04B 35/565 (2006.01); C04B 35/626 (2006.01); C04B 35/628 (2006.01); C04B 35/65 (2006.01); C30B 1/10 (2006.01); C30B 7/14 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 1/02 (2013.01); B22F 1/0011 (2013.01); B22F 1/0085 (2013.01); C01B 31/36 (2013.01); C04B 35/565 (2013.01); C04B 35/62645 (2013.01); C04B 35/62675 (2013.01); C04B 35/62802 (2013.01); C04B 35/62834 (2013.01); C04B 35/65 (2013.01); C30B 1/10 (2013.01); C30B 7/14 (2013.01); C30B 29/36 (2013.01); B22F 2302/105 (2013.01); B22F 2304/10 (2013.01); C01P 2004/60 (2013.01); C04B 2235/48 (2013.01); C04B 2235/483 (2013.01); C04B 2235/5427 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/72 (2013.01); C04B 2235/784 (2013.01); Y10T 428/2982 (2015.01);
Abstract
A method of preparing silicon carbide powder is provided, which includes mixing first silicon carbide powder with a liquid silicon carbide precursor, annealing the mixture at a first temperature and converting the silicon carbide precursor to a β-phase silicon carbide particulate material, and annealing the material at a second temperature and grain-growing the first silicon carbide powder to second silicon carbide powder using the β-phase silicon carbide particulate material.