The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Aug. 22, 2014
Panasonic Corporation, Osaka, JP;
Masahiro Deguchi, Osaka, JP;
Satoshi Yotsuhashi, Osaka, JP;
Reiko Taniguchi, Osaka, JP;
Hiroshi Hashiba, Osaka, JP;
Yuka Yamada, Nara, JP;
Kazuhiro Ohkawa, Saitama, JP;
Abstract
Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlGaN layer (0<x≦0.25), an AlGaN layer (0≦y≦x), and a GaN layer. The AlGaN layer is interposed between the AlGaN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlGaN layer. The value of y decreases from the interface with the AlGaN layer f toward the interface with the GaN layer. The AlGaN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.